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FKPF12N60 / FKPF12N80
FKPF12N60 / FKPF12N80
Application Explanation
* * * * Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool
2 1: T1 2: T2 3: Gate 3 123
TO-220F
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VDRM Parameter Repetitive Peak Off-State Voltage
(Note1 )
Rating FKPF12N60 600 FKPF12N80 800
Units V
Symbol IT (RMS) ITSM I2t di/dt PGM PG (AV) VGM IGM TJ TSTG Viso
Parameter RMS On-State Current Surge On-State Current I2t for Fusing Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Isolation Voltage
Conditions Commercial frequency, sine full wave 360 conduction, TC=82C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of halfwave 60Hz, surge on-state current IG = 2x IGT, tr 100ns TC = +80C, Pulse Width = 1.0s TC = +80C, t = 8.3ms Pulse Width 1.0sec; TC = 90C
Rating 12 120 60 50 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125
Units A A A2s A/s W W V A C C V
Ta=25C, AC 1 minute, T1 T2 G terminal to case
1500
Thermal Characteristic
Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min. Typ. Max. 3.0 Units C/W
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
FKPF12N60 / FKPF12N80
Electrical Characteristics TC=25C unless otherwise noted
Symbol IDRM VTM Parameter Repetieive Peak Off-State Current On-State Voltage I VGT Gate Trigger Voltage (Note 2) II III I IGT VGD IH IL dv/dt (dv/dt)C Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125C, Exponential Rise 10 300 II III VD=6V, RL=6, RG=330 TJ=125C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=6V, RL=6, RG=330 Test Condition VDRM applied TC=25C, ITM=17A Instantaneous measurement T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) Min. 0.2 Typ. Max. 20 1.5 1.5 1.5 1.5 30 30 30 50 50 70 Units A V V V V mA mA mA V mA mA mA V/s V/s
Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 C/W
VDRM (V)
Test Condition
Commutating voltage and current waveforms (inductive load)
FKPF12N60
FKPF12N80
1. Junction Temperature TJ=125C 2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms 3. Peak off-state voltage VD = 400V
Supply Voltage (di/dt)C Main Current
Time
Time
Main Voltage (dv/dt)C
Time VD
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(+) IGT GATE T1
(+) IGT GATE T1
Quadrant I
IGT (+) T2 (+) T2
+ IGT
Quadrant III
(+) IGT GATE T1
(+) IGT GATE T1
Quadrant IV
T2 Negative
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
FKPF12N60 / FKPF12N80
Typical Curves
50
200 180
SURGE ON-STATE CURRENT [A]
40
160 140 120 100 80 60 40 20 0
ON-STATE CURRENT [A]
30
Tj=25 Tj=125
20
10
0 0.0
0.5
1.0
1.5
2.0
1
10
100
ON-STATE VOLTAGE [V]
CONDUCTION TIME (CYCLES AT 60Hz)
Figure 1. Maximum On-state Characteristics
Figure 2. Rated Surge On-state Current
100
1000
VGM=10V
10
PGM=5W PG(AV)=0.5W VGT=1.5V
NORMALIZED GATE TRIGGER CURRENT [%]
GATE VOLTAGE [V]
IFGT, IRGT
IGM=2A
100
1
IFGT
0.1 10
IRGT
IFGT, IRGT
100
VGD=0.2V
1000 10000
10 -60
-40
-20
0
20
40
60
80
100
120
140
GATE CURRENT [mA]
JUNCTION TEMPERATURE []
Figure 3. Gate Characteristics
Figure 4. Gate Trigger Current vs Tj
1000
NORMALIZED GATE TRIGGER VOLTAGE [%]
10
JUNCTION TO CASE
100
TRANSIENT THERMAL IMPEDANCE o Rth(j-c) [ C/W] -40 -20 0 20 40 60 80 100 120 140
1
10 -60
0.1 1E-3
0.01
0.1
1
10
100
JUNCTION TEMPERATURE []
TIME [s]
Figure 5. Gate Trigger Voltage vs Tj
Figure 6. Transient Thermal Impedance
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
FKPF12N60 / FKPF12N80
Typical Curves (Continues)
140 160
Maximum Allowable Ambient Temperature []
120
CASE TEMPERATURE []
100
NO HEAT SINK 30 x 30 x 2 AL HEAT SINK 50 x 50 x 2 AL HEAT SINK 70 x 70 x 2 AL HEAT SINK 100 x 100 x 2 AL HEAT SINK
140 120 100 80 60 40 20 0 0 2 4
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
80
60
40
20
0 0 2
4
6
8
10 12
360 CONDUCTION RESISTIVE, INDUCTIVE LOAD
6 8 10 12 14 16
IT(RMS) [A]
RMS ON-STATE CURRENT [A]
Figure 7. Allowable Ambient Temperature vs Rms On-state Current
Figure 8. Allowable Case Temperature vs Rms On-state Current
NORMALIZED REPETIVITE OFF-STATE CURRENT [%]
16
10
5
ON STATE POWER DISSIPATION [W]
14 12 10 8 6 4 2 0 0
360 CONDUCTION RESISTIVE, INDUCTIVE LOAD
TYPICAL EXAMPLE
10
4
10
3
10
2
2
4
6
8
10
12
14
16
-60
-40
-20
0
20
40
60
80
100
120
140
RMS ON-STATE CURRENT [A]
JUNCTION TEMPERATURE [V]
Figure 9. Maximum On-state Power Dissipation
Figure 10. Repetitive Peak Off-state Current vs Junction Temperature
1000
1000
NORMALIZED HOLDING CURRENT [%]
TYPICAL EXAMPLE LATCHING CURRENT [mA]
100
T2(+), G(-) TYPICAL EXEMPLE
100
10
T2( ), G(+) TYPICAL EXEMPLE
10 -60
-40
-20
0
20
40
60
80
100
120
140
1 -60
-40
-20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE []
JUNCTION TEMPERATURE
Figure 11. Holding Current vs Junction Temperature
Figure 12. Laching Current vs Junction Temperature
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
FKPF12N60 / FKPF12N80
Typical Curves (Continues)
160
1000
NORMALIZED BREAKOVER VOLTAGE [%]
TYPICAL EXAMPLE
140
NORMALIZED GATE TRIGGER CURRENT [%]
IRGT IRGT
100
120
100
80
60
IFGT
40
20
0 -60
10 1 10 100
-40
-20
0
20
40
60
80
100
120
140
JUNCTION TEMPERATURE [V]
GATE CURRENT PULSE WIDTH [uS]
Figure 13. Breakover Voltage vs. Junction Temperature
Figure 14. Gate Trigger Current vs. Gate Current Pulse Width
160
NORMALIZED BREAKOVER VOLTAGE [%]
140 120 100 80 60 40 20
QUADRANT
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE [V/us]
TYPICAL EXAMPLE Tj=125
100
TYPICAL EXAMPLE Tj = 125 IT = 4A = 500us VD = 200V f = 3Hz QUADRANT
10
QUADRANT
QUADRANT
1
10
1
10
2
10
3
10
4
10
0
10
1
10
2
10
3
RATE OF RISE OF-STATE VOLTAGE [V/us]
RATE OF DECAY OF ON-STATE COMMUTATION CURRENT [A/ms]
Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage
Figure 16. Commutation Characteristics
(c)2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
FKPF12N60 / FKPF12N80
Package Dimension
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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